Magnetic and microstructural properties of sputter deposited Cr-doped aluminum nitride thin films on silicon substrates

被引：15

作者：

Wistrela, E. ^{[1
]}

Bittner, A. ^{[1
]}

Schneider, M. ^{[1
]}

Reissner, M. ^{[2
]}

Schmid, U. ^{[1
]}

机构：

[1] TU Wien, Inst Sensor & Actuator Syst, Gusshausstr 27-29, A-1040 Vienna, Austria

[2] TU Wien, Inst Solid State Phys, Wiedner Hauptstr 8-10, A-1040 Vienna, Austria

来源：

JOURNAL OF APPLIED PHYSICS | 2017年 / 121卷 / 11期

基金：

奥地利科学基金会;

关键词：

ROOM-TEMPERATURE FERROMAGNETISM; ALN; GROWTH; MN; ZNO; GAN;

D O I：

10.1063/1.4978748

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this paper, we report on the microstructural and magnetic properties of CrxAl1-xN thin films with Cr concentrations ranging up to x = (8.5+/-0.5) at. %. The thin films are sputter deposited on silicon substrates and exhibit a wurtzite type microstructure verified by X-ray diffraction measurements. A vibrating sample magnetometer based measurement equipment is used to investigate magnetic properties of the Cr doped thin films in a temperature range of T = 10 K-300 K, revealing a paramagnetic behavior. With increasing temperature, the temperature independent diamagnetic contribution of the substrate material dominates the overall response characteristics. No room temperature ferromagnetism is observed for all samples investigated. (C) 2017 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license.

引用

页数：7

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