Fabrication of SiGe rings and holes on Si(001) by flash annealing

被引：4
|
作者：
Persichetti, L. [1 ,2 ]
Capasso, A. [3 ]
Sgarlata, A. [1 ]
Quatela, A. [2 ]
Kaciulis, S. [4 ]
Mezzi, A. [4 ]
Notarianni, M. [3 ]
Motta, N. [3 ]
Fanfoni, M. [1 ]
Balzarotti, A. [1 ]
机构：
[1] Univ Roma Tor Vergata, Dipartimento Fis, I-00133 Rome, Italy
[2] Univ Roma Tor Vergata, Dipartimento Ingn Elettron, CHOSE, I-00133 Rome, Italy
[3] Queensland Univ Technol, Sch Chem Phys & Mech Engn, Brisbane, Qld 4001, Australia
[4] CNR, ISMN, I-00015 Rome, Italy
来源：
APPLIED SURFACE SCIENCE | 2013年 / 283卷
关键词：
Heteroepitaxial growth; Quantum dots; Nanorings; Nanoholes; QUANTUM RINGS; GE; GROWTH; SURFACE; SILICON; STRESS; ENERGY; DOTS;
D O I：
10.1016/j.apsusc.2013.07.024
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We show that SiGe islands are transformed into nanoholes and rings solely by annealing treatments and without Si capping. Rings are produced by a rapid flash heating at temperatures higher than the melting point of Ge, whereas nanoholes are produced by several minutes of annealing. The rings are markedly rich in Si with respect to the pristine islands, suggesting that the evolution path from islands to rings is driven by the selective dissolution of Ge occurring at high temperatures. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码：813 / 819
页数：7
相关论文
共 50 条
  • [31] Fabrication of GaSb quantum rings on GaAs(001) by droplet epitaxy
    Kunrugsa, Maetee
    Tung, Kar Hoo Patrick
    Danner, Aaron James
    Panyakeow, Somsak
    Ratanathammaphan, Somchai
    JOURNAL OF CRYSTAL GROWTH, 2015, 425 : 287 - 290
  • [32] Dislocation engineering in SiGe heteroepitaxial films on patterned Si (001) substrates
    Gatti, R.
    Boioli, F.
    Grydlik, M.
    Brehm, M.
    Groiss, H.
    Glaser, M.
    Montalenti, F.
    Fromherz, T.
    Schaeffler, F.
    Miglio, Leo
    APPLIED PHYSICS LETTERS, 2011, 98 (12)
  • [33] Fabrication of Si surface pattern by Ar beam irradiation and annealing methodh
    Zhang, J.
    Momota, S.
    Maeda, K.
    Terauchi, H.
    Furuta, M.
    Kawaharamura, T.
    Nitta, N.
    Wang, D.
    ION IMPLANTATION TECHNOLOGY 2012, 2012, 1496 : 143 - 146
  • [34] UV nanoimprint lithography for the realization of large-area ordered SiGe/Si(001) island arrays
    Lausecker, E.
    Brehm, M.
    Grydlik, M.
    Hackl, F.
    Bergmair, I.
    Muehlberger, M.
    Fromherz, T.
    Schaeffler, F.
    Bauer, G.
    APPLIED PHYSICS LETTERS, 2011, 98 (14)
  • [35] Fabrication of high quality strained SiGe on Si substrate by RPCVD
    Xue ZhongYing
    Chen Da
    Liu LinJie
    Jiang HaiTao
    Bian JianTao
    Wei Xing
    Di ZengFeng
    Zhang Miao
    Wang Xi
    CHINESE SCIENCE BULLETIN, 2012, 57 (15): : 1862 - 1867
  • [36] Mixed SiGe ad-dimer on Si(001): diffusion triggers intermixing
    Lu, ZY
    Wang, CZ
    Ho, KM
    SURFACE SCIENCE, 2002, 506 (03) : L282 - L286
  • [37] Effective masses of holes in non-(001) ultrathin Si layers
    Kajikawa, Y.
    JOURNAL OF APPLIED PHYSICS, 2009, 106 (06)
  • [38] Fabrication of (001)-Oriented MgO Thin Films on Si Substrates
    Onodera, Takashi
    Yoshida, Masahiro
    Tezuka, Nobuki
    Sugimoto, Satoshi
    Saito, Yoshiaki
    JOURNAL OF THE JAPAN INSTITUTE OF METALS AND MATERIALS, 2013, 77 (03) : 89 - 93
  • [39] Fabrication and Characterization of Ordered GeSi Nanoislands on Si (001) Substrates
    Zhong, Zhenyang
    Chen, Peixuan
    Pan, Bingying
    Chen, Yanwu
    An, Zhenhua
    Lu, Fang
    Jiang, Zuimin
    INEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2, 2010, : 955 - +
  • [40] Fabrication and characterization of SiGe coaxial quantum wells on ordered Si nanopillars
    Wu, Zilong
    Lei, Hui
    Zhou, Tong
    Fan, Yongliang
    Zhong, Zhenyang
    NANOTECHNOLOGY, 2014, 25 (05)
12345