Fabrication of SiGe rings and holes on Si(001) by flash annealing

被引：4
|
作者：
Persichetti, L. [1 ,2 ]
Capasso, A. [3 ]
Sgarlata, A. [1 ]
Quatela, A. [2 ]
Kaciulis, S. [4 ]
Mezzi, A. [4 ]
Notarianni, M. [3 ]
Motta, N. [3 ]
Fanfoni, M. [1 ]
Balzarotti, A. [1 ]
机构：
[1] Univ Roma Tor Vergata, Dipartimento Fis, I-00133 Rome, Italy
[2] Univ Roma Tor Vergata, Dipartimento Ingn Elettron, CHOSE, I-00133 Rome, Italy
[3] Queensland Univ Technol, Sch Chem Phys & Mech Engn, Brisbane, Qld 4001, Australia
[4] CNR, ISMN, I-00015 Rome, Italy
来源：
APPLIED SURFACE SCIENCE | 2013年 / 283卷
关键词：
Heteroepitaxial growth; Quantum dots; Nanorings; Nanoholes; QUANTUM RINGS; GE; GROWTH; SURFACE; SILICON; STRESS; ENERGY; DOTS;
D O I：
10.1016/j.apsusc.2013.07.024
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We show that SiGe islands are transformed into nanoholes and rings solely by annealing treatments and without Si capping. Rings are produced by a rapid flash heating at temperatures higher than the melting point of Ge, whereas nanoholes are produced by several minutes of annealing. The rings are markedly rich in Si with respect to the pristine islands, suggesting that the evolution path from islands to rings is driven by the selective dissolution of Ge occurring at high temperatures. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码：813 / 819
页数：7
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