Phase change optical recording films based on Bi2Te3-Sb2Te3 alloys

被引：4

作者：

Pagès, O ^{[1
]}

Feutelais, Y ^{[1
]}

Didry, JR ^{[1
]}

Keller, G ^{[1
]}

Jacquemin, H ^{[1
]}

Legendre, B ^{[1
]}

机构：

[1] Fac Pharm, Lab Chim Phys Minerale & Bioinorgan, EA 401, F-92296 Chatenay Malabry, France

来源：

MATERIALS RESEARCH BULLETIN | 1999年 / 34卷 / 07期

关键词：

chalcogenides; optical materials; thin films; vapor deposition; Raman spectroscopy;

D O I：

10.1016/S0025-5408(99)00097-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin films from cross section Bi2Te3-Sb2Te3 were studied in view of glass-crystal reversible phase change recording by using laser diode irradiation. By adjusting the spherical aberration of the focalization lens and using a Raman microprobe, reflectivity and vibrational profiles of the laser spot were performed in order to determine the most sensitive region of the illuminated area. The optical switch was then analyzed in optimized conditions over the whole cross section. When considering identical cycling parameters, the latter appears to be inverted at a critical composition, which depends critically on the layer thickness. (C) 1999 Elsevier Science Ltd.

引用

页码：1065 / 1077

页数：13

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