A Compact Model for Double-Gate Tunneling Field-Effect-Transistors and Its Implications on Circuit Behaviors

被引：0

作者：

Zhang, Lining ^{[1
]}

He, Jin ^{[2
]}

Chan, Mansun ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Hong Kong, Peoples R China

[2] Peking Univ, PKU HKUST Shenzhen Hong Kong Inst, Shenzhen SOC Key Lab, Shenzhen, Peoples R China

来源：

2012 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2012年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A compact model for tunneling field-effect-transistors (TFETs) is presented. The model includes a band-to-band tunneling (BTBT) current module and a terminal charge module. TCAD simulations show that the model describes TFETs currents and capacitances accurately. The model is implemented into a circuit simulator and used to simulate TFETs logic circuits and SRAMs. Unique features in TEFTs including large overshoot during switching, long delay and uni-directional conduction are demonstrated.

引用

页数：4

共 11 条

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