Interface characterization of metal-HfO2-InAs gate stacks using hard x-ray photoemission spectroscopy

被引：0

作者：

Persson, O. ^{[1
]}

Lind, E. ^{[2
]}

Lundgren, E. ^{[1
]}

Rubio-Zuazo, J. ^{[3
,4
]}

Castro, G. R. ^{[3
,4
]}

Wernersson, L. -E. ^{[2
]}

Mikkelsen, A. ^{[1
]}

Timm, R. ^{[1
]}

机构：

[1] Lund Univ, Dept Phys, S-22100 Lund, Sweden

[2] Lund Univ, S-22100 Lund, Sweden

[3] European Synchrotron Radiat Facil, SpLine Spanish CRG Beamline, F-38043 Grenoble 09, France

[4] CSIC, ICMM, E-28049 Madrid, Spain

来源：

AIP ADVANCES | 2013年 / 3卷 / 07期

基金：

瑞典研究理事会; 欧洲研究理事会;

关键词：

ATOMIC LAYER DEPOSITION; PHOTOELECTRON-SPECTROSCOPY; DIELECTRICS; GAAS; ENERGY; HFO2;

D O I：

10.1063/1.4817575

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

MOS devices based on III-V semiconductors and thin high-k dielectric layers offer possibilities for improved transport properties. Here, we have studied the interface structure and chemical composition of realistic MOS gate stacks, consisting of a W or Pd metal film and a 6- or 12-nm-thick HfO2 layer deposited on InAs, with Hard X-ray Photoemission Spectroscopy. In and As signals from InAs buried more than 18 nm below the surface are clearly detected. The HfO2 layers are found to be homogeneous, and no influence of the top metal on the sharp InAs-HfO2 interface is observed. These results bridge the gap between conventional photoemission spectroscopy studies on various metal-free model samples with very thin dielectric layers and realistic MOS gate stacks. (C) 2013 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.

引用

页数：7

共 38 条

[1]

[Anonymous], 1973, THEORETICAL PHOTOION

[2] Multiple-interface coupling effects in local electron-energy-loss measurements of band gap energies [J].