Memory cell based on a φ Josephson junction

被引：70

作者：

Goldobin, E. ^{[1
,2
]}

Sickinger, H. ^{[1
,2
]}

Weides, M. ^{[3
,4
]}

Ruppelt, N. ^{[5
]}

Kohlstedt, H. ^{[5
]}

Kleiner, R. ^{[1
,2
]}

Koelle, D. ^{[1
,2
]}

机构：

[1] Univ Tubingen, Inst Phys, D-72076 Tubingen, Germany

[2] Univ Tubingen, Ctr Collect Quantum Phenomena LISA, D-72076 Tubingen, Germany

[3] Forschungszentrum Julich, Peter Grunberg Inst, D-52425 Julich, Germany

[4] Forschungszentrum Julich, JARA Fundamentals Future Informat Technol, D-52425 Julich, Germany

[5] Univ Kiel, Tech Fak, D-24143 Kiel, Germany

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 24期

关键词：

21;

D O I：

10.1063/1.4811752

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The phi Josephson junction has a doubly degenerate ground state with the Josephson phases +/-phi. We demonstrate the use of such a phi Josephson junction as a memory cell (classical bit), where writing is done by applying a magnetic field and reading by applying a bias current. In the "store" state, the junction does not require any bias or magnetic field, but just needs to stay cooled for permanent storage of the logical bit. Straightforward integration with rapid single flux quantum logic is possible. (C) 2013 AIP Publishing LLC.

引用

页数：4

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