Comment on "Diffusion of n-type dopants in germanium" [Appl. Phys. Rev. 1, 011301 (2014)]

被引：4

作者：

Cowern, N. E. B. ^{[1
]}

Simdyankin, S. ^{[1
]}

Goss, J. P. ^{[1
]}

Napolitani, E. ^{[2
,3
]}

De Salvador, D. ^{[2
,3
]}

Bruno, E. ^{[4
,5
]}

Mirabella, S. ^{[4
,5
]}

Ahn, C. ^{[6
]}

Bennett, N. S. ^{[7
]}

机构：

[1] Newcastle Univ, Sch Elect & Elect Engn, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England

[2] Univ Padua, CNR IMM MATIS, I-35131 Padua, Italy

[3] Univ Padua, Dipartimento Fis, I-35131 Padua, Italy

[4] Univ Catania, CNR IMM MATIS, I-95123 Catania, Italy

[5] Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy

[6] Samsung Semicond Inc, San Jose, CA 95134 USA

[7] Heriot Watt Univ, Sch Engn & Phys Sci, Inst Mech Proc & Energy Engn, Edinburgh EH14 4AS, Midlothian, Scotland

来源：

APPLIED PHYSICS REVIEWS | 2015年 / 2卷 / 03期

关键词：

SELF-INTERSTITIALS; MECHANISMS; SILICON; DEFECTS;

D O I：

10.1063/1.4929762

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors of the above paper call into question recent evidence on the properties of self-interstitials, I, in Ge [Cowern et al., Phys. Rev. Lett. 110, 155501 (2013)]. We show that this judgment stems from invalid model assumptions during analysis of data on B marker-layer diffusion during proton irradiation, and that a corrected analysis fully supports the reported evidence. As previously stated, I-mediated self-diffusion in Ge exhibits two distinct regimes of temperature, T: high-T, dominated by amorphous-like mono-interstitial clusters-i-morphs-with self-diffusion entropy approximate to 30 k, and low-T, where transport is dominated by simple self-interstitials. In a transitional range centered on 475 degrees C both mechanisms contribute. The experimental I migration energy of 1.84 +/- 0.26 eV reported by the Munster group based on measurements of self-diffusion during irradiation at 550 degrees C < T < 680 degrees C further establishes our proposed i-morph mechanism. (C) 2015 AIP Publishing LLC.

引用

页数：3

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