11.5-W CW 1.83-μm diode laser array

被引：9

作者：

Maiorov, M ^{[1
]}

Menna, R

Khalfin, V

Milgazo, H

Matarese, R

Garbuzov, D

Connolly, J

机构：

[1] Sensors Unlimited Inc, Princeton, NJ 08540 USA

[2] Sarnoff Corp, Princeton, NJ 08543 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1999年 / 11卷 / 08期

关键词：

continuous-wave (CW) lasers; diode lasers; InGaAsP; laser arrays;

D O I：

10.1109/68.775313

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate high-power operation of both individual broad-waveguide separate-confinement-heterostructure quantum-well InGaAsP-InP laser diodes and 1-cm-wide arrays emitting at 1.83 mu m. Despite strong dependence of threshold current density and diode efficiency on operating temperature, a continuous-wave output power of 2.1 W has been obtained for 100-mu m-aperture lasers with 2-mm-long cavities, An output power of 11.5 W was reached for ten element 1-cm-wide array at a heatsink temperature of 16 degrees C.

引用

页码：961 / 963

页数：3

共 6 条

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