Cu-Embedded AlN-Based Nonpolar Nonvolatile Resistive Switching Memory

被引：38
|
作者：
Chen, Chao [1 ]
Gao, Shuang [1 ]
Tang, Guangsheng [1 ]
Song, Cheng [1 ]
Zeng, Fei [1 ]
Pan, Feng [1 ]
机构：
[1] Tsinghua Univ, Dept Mat Sci & Engn, Adv Mat Lab, Beijing 100084, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 12期
基金：
中国国家自然科学基金;
关键词：
AlN; nonvolatile memory; resistance random access memory (RRAM); resistive switching (RS);
D O I：
10.1109/LED.2012.2220953
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This letter covers the fabrication of a nonpolar resistive switching (RS) random access memory device using Cu-embedded AlN and its reproducible RS characteristics. The AlN-based memory device shows endurance of > 10(3), reliable retention time (ten years extrapolation at both room temperature and 85 degrees C), and fast programming speed under 100-ns pulses in unipolar operation mode. The switching mechanism is believed to be mediated by the formation and rupture of conductive Cu filaments.
引用
收藏
页码：1711 / 1713
页数：3
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