The reduction of efficiency droop by Al0.82In0.18N/GaN superlattice electron blocking layer in (0001) oriented GaN-based light emitting diodes

被引：42

作者：

Chung, Roy B. ^{[1
]}

Han, Changseok ^{[1
]}

Pan, Chih-Chien ^{[1
]}

Pfaff, Nathan ^{[1
]}

Speck, James S. ^{[1
]}

DenBaars, Steven P. ^{[1
,2
]}

Nakamura, Shuji ^{[1
,2
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 13期

关键词：

Gallium alloys - III-V semiconductors - Indium alloys - Efficiency - Semiconductor alloys;

D O I：

10.1063/1.4756791

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

To investigate the effect of Al0.82In0.18N electron blocking layer (EBL) on the efficiency droop, (0001) oriented InGaN light emitting diodes (LEDs) were grown with two different types of EBLs-single Al0.82In0.18N:Mg layer and Al0.82In0.18N:Mg (2 nm)/GaN:Mg (2 nm) superlattice (SL) structure with 7 periods. It was found that the output power and operating voltage of single Al0.82In0.18N EBL LED were sensitive to EBL thickness due to the difficulty in growing high quality Mg doped Al0.82In0.18N. On the other hand, LED with SL EBL showed no deterioration of optical power and operating voltage while its efficiency droop (17% at 300A/cm(2)) reduced by more than a half compared to a conventional Al0.2In0.8N (20 nm) EBL LED (36% at 300 A/cm(2)). (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4756791]

引用

页数：3

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