Some physical investigations of AgInS2-xSex thin film compounds obtained from AgInS2 annealed in seleneide atmosphere

被引：20

作者：

Gherouel, D. ^{[1
]}

Gaied, I. ^{[2
]}

Boubaker, K. ^{[1
]}

Yacoubi, N. ^{[2
]}

Amlouk, M. ^{[1
]}

机构：

[1] Tunis El Manar Univ, Fac Sci Tunis, Unite Phys Dispositifs Semicond, Tunis 2092, Tunisia

[2] Inst Preparatoire Etud Ingn Nabeul, Merazka 8000, Nabeul, Tunisia

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2012年 / 545卷

关键词：

AgInS2-xSex; Annealing temperature; Mirage effect; Urbach tailing; Amlouk-Boubaker opto-thermal expansivity; OPTICAL-PROPERTIES; THERMAL-CONDUCTIVITY; SPATIAL EVOLUTION; BOUBAKER; MODEL; UNIFORM; GROWTH;

D O I：

10.1016/j.jallcom.2012.07.148

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

This work deals with the preparation of AgInS2-xSex from AgInS2 (AIS) sprayed thin films which treated under seleneide atmosphere during 1 h at various temperatures (400, 450 and 500 degrees C). Previously elaborated AgInS2 compound, which has been conceived as an absorber layer in the SnO2:F/AgInS2 (p)/Al Schottky diode, has presented some generation-recombination deficiencies and tunneling effects. XRD analysis shows the incorporation of Se element in the AgInS2 matrix especially for use of 450 degrees C as heat temperature. The optical band gap calculated from transmittance and reflectance spectra of the above samples show the effect of annealed temperature on the band gap energy. The refractive index and extinction coefficient of the differently sample of AgInS2-xSex thin films have been reached through their transmission and reflectance spectra on a wide range of wavelengths. The surface topography and the roughness parameters of AgInS2-xSx thin films had been studied by AFM. Finally, thermal conductivity was determinate by the mirage effect. This thermal property was decreased by the annealed temperatures. (c) 2012 Elsevier B.V. All rights reserved.

引用

页码：190 / 199

页数：10

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