Adsorption-Induced Energy Gap in the Density of States of Single-Sheet Graphene

被引：22

作者：

Davydov, S. Yu. ^{[1
]}

机构：

[1] Russian Acad Sci, Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

SEMICONDUCTORS | 2012年 / 46卷 / 02期

基金：

俄罗斯基础研究基金会;

关键词：

HYDROGEN-ATOM; ALKALI-METAL;

D O I：

10.1134/S1063782612020066

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

On the basis of a simple model, it is shown that a monolayer of adatoms bound by an indirect exchange interaction causes the appearance of an energy gap in the density of states of a two-dimensional substrate. The character of the dependence of the pi and pi* bands and band gap on the position of the adatom level is analyzed in detail. The occupation numbers for the monolayer of adatoms and graphene are calculated. Numerical calculations are carried out for graphane.

引用

页码：193 / 198

页数：6

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