Two-component photoluminescence decay in InGaN/GaN multiple quantum well structures

被引：0
|
作者：
Feng, SW
Cheng, YC
Liao, CC
Chung, YY
Liu, CW
Yang, CC
Lin, YS
Ma, KJ
Chyi, JI
机构：
[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 10764, Taiwan
[2] Natl Taiwan Univ, Grad Inst Electro Opt Engn, Taipei 10764, Taiwan
[3] Chung Cheng Inst Technol, Dept Engn Mech, Tahsi, Taoyuan, Taiwan
[4] Natl Cent Univ, Dept Elect Engn, Taipei, Taiwan
来源：
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2001年 / 228卷 / 01期
关键词：
D O I：
10.1002/1521-3951(200111)228:1<121::AID-PSSB121>3.0.CO;2-I
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Two-component decay of time-resolved photo luminescence (TRPL) intensity in three InGaN/GaN multiple quantum well samples were observed. The first-decay component was attributed to exciton relaxation of free-carrier and localized states; the second-decay one was dominated by the relaxation of localized excitons. The second-decay lifetime was related to the extent of carrier localization or indium aggregation and phase separation. The lifetime of free-carrier states was connected with the defect density. Based on the temperature-dependent data of PL and stimulated emission (SE), the localization energies of the three samples were calibrated to show the consistent trend with the second-decay lifetime and previous material analyses.
引用
收藏
页码：121 / 124
页数：4
相关论文
共 50 条
  • [1] Two-component photoluminescence decay and carrier localization in InGaN/GaN multiple quantum well structures
    Feng, SW
    Cheng, YC
    Yang, CC
    Tsai, CY
    Lin, YS
    Hsu, C
    Ma, KJ
    Chyi, JI
    CLEO(R)/PACIFIC RIM 2001, VOL II, TECHNICAL DIGEST, 2001, : 220 - 221
  • [2] Structural properties, In distribution, and photoluminescence of multiple InGaN/GaN quantum well structures
    Neubauer, B
    Widmann, H
    Gerthsen, D
    Stephan, T
    Kalt, H
    Bläsing, J
    Veit, P
    Krost, A
    Schön, O
    Heuken, M
    PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 2000, 1 : 375 - 378
  • [3] Photoluminescence studies of polarization effects in InGaN/(In)GaN multiple quantum well structures
    Department of Physics and Astronomy, Katholieke Universiteit, 3001 Leuven, Belgium
    不详
    Jpn. J. Appl. Phys., 3 PART 1
  • [4] Photoluminescence Studies of Polarization Effects in InGaN/(In)GaN Multiple Quantum Well Structures
    Zhang, Liyang
    Cheng, Kai
    Liang, Hu
    Lieten, Ruben
    Leys, Maarten
    Borghs, Gustaaf
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (03)
  • [5] Multiple-component photoluminescence decay caused by carrier transport in InGaN/GaN multiple quantum wells with indium aggregation structures
    Feng, SW
    Cheng, YC
    Chung, YY
    Yang, CC
    Mao, MH
    Lin, YS
    Ma, KJ
    Chyi, JI
    APPLIED PHYSICS LETTERS, 2002, 80 (23) : 4375 - 4377
  • [6] Fabrication and photoluminescence enhancement of InGaN/GaN multiple-quantum-well nanotube structures
    Wang, Qiang
    Li, Kuilong
    Liu, Meng
    SUPERLATTICES AND MICROSTRUCTURES, 2018, 122 : 46 - 56
  • [7] Photoluminescence decay dynamics in an InGaN/GaN/AlGaN single quantum well
    Li, W
    Bergman, P
    Monemar, B
    JOURNAL OF APPLIED PHYSICS, 1997, 81 (02) : 1005 - 1007
  • [8] Effect of InGaN well layer growth rate upon photoluminescence of InGaN/GaN multiple-quantum-well structures
    Li, Rui
    Wang, Chengxin
    Shi, Kaiju
    Wu, Zonghao
    Deng, Jianyang
    Li, Changfu
    Xu, Mingsheng
    Xu, Xiangang
    Ji, Ziwu
    MICRO AND NANOSTRUCTURES, 2022, 165
  • [9] Investigation of InGaN/GaN quantum well structures by photoluminescence and photoluminescence excitation spectroscopy
    Dalfors, J
    Holtz, PO
    Bergman, JP
    Monemar, B
    Amano, H
    Akasaki, I
    PHYSICA SCRIPTA, 1999, T79 : 60 - 63
  • [10] Investigation of InGaN/GaN quantum well structures by photoluminescence and photoluminescence excitation spectroscopy
    Dalfors, J.
    Holtz, P.O.
    Bergman, J.P.
    Monemar, B.
    Amano, H.
    Akasaki, I.
    Physica Scripta T, 1999, 79 : 60 - 63
12345