Design and Analysis of a 21-29-GHz Ultra-Wideband Receiver Front-End in 0.18-μm CMOS Technology

被引:67
作者
Lin, Yo-Sheng [1 ]
Lee, Jen-How [1 ]
Huang, Sheng-Li [1 ]
Wang, Chiu-Hsuan [1 ]
Wang, Chien-Chin [1 ]
Lu, Shey-Shi [2 ,3 ]
机构
[1] Natl Chi Nan Univ, Dept Elect Engn, Puli 545, Taiwan
[2] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 106, Taiwan
[3] Natl Taiwan Univ, Dept Elect Engn, Taipei 106, Taiwan
关键词
Balun; Gilbert-cell mixer; low-noise amplifier (LNA); low power; port-to-port isolation; receiver front-end; DIRECT-CONVERSION RECEIVER; GHZ; TRANSFORMERS; LNA;
D O I
10.1109/TMTT.2012.2198234
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper reports the design and analysis of 21-29-GHz CMOS low-noise amplifier (LNA), balun and mixer in a standard 0.18-m CMOS process for ultra-wideband automotive radar systems. To verify the proposed LNA, balun, and mixer architectures, a simplified receiver front-end comprising an LNA, a double-balanced Gilbert-cell-based mixer, and two Marchand baluns was implemented. The wideband Marchand baluns can convert the single RF and local oscillator (LO) signals to nearly perfect differential signals over the 21-29-GHz band. The performance of the mixer is improved with the current-bleeding technique and a parallel resonant inductor at the differential outputs of the RF transconductance stage. Over the 21-29-GHz band, the receiver front-end exhibits excellent noise figure of 4.6 +/- 0.5 dB, conversion gain of 23.7 +/- 1.4 dB, RF port reflection coefficient lower than -8.8 dB, LO-IF isolation lower than -47 dB, LO-RF isolation lower than -55 dB, and RF-IF isolation lower than -35.5 dB. The circuit occupies a chip area of 1.25 x 1.06 mm(2), including the test pads. The dc power dissipation is only 39.2 mW.
引用
收藏
页码:2590 / 2604
页数:15
相关论文
共 50 条
[41]   ANALYSIS AND DESIGN OF A 3-5 GHz ULTRA-WIDEBAND CMOS LOW-NOISE AMPLIFIER [J].
Ansari, Babak ;
Shamsi, Hossein .
EUROCON 2009: INTERNATIONAL IEEE CONFERENCE DEVOTED TO THE 150 ANNIVERSARY OF ALEXANDER S. POPOV, VOLS 1- 4, PROCEEDINGS, 2009, :240-+
[42]   Design of low-noise, low-power 10-GHz VCO using 0.18-μm CMOS technology [J].
Ohhata, K ;
Harasawa, K ;
Honda, M ;
Yamashita, K .
IEICE TRANSACTIONS ON ELECTRONICS, 2006, E89C (02) :203-205
[43]   25-53 GHz ultra-wideband high-isolation passive balanced duplexer on 0.18-μm BiCMOS for 5G applications [J].
Hsiao, Meng-Jie ;
Nguyen, Cam .
IET MICROWAVES ANTENNAS & PROPAGATION, 2020, 14 (15) :1960-1968
[44]   Current-mode design techniques in low-voltage 24-GHz RF CMOS receiver front-end [J].
Wu, Chung-Yu ;
Wang, Wen-Chieh ;
Shahroury, Fadi R. ;
Huang, Zue-Der ;
Zhan, Hao-Jie .
ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING, 2009, 58 (03) :183-195
[45]   Current-mode design techniques in low-voltage 24-GHz RF CMOS receiver front-end [J].
Chung-Yu Wu ;
Wen-Chieh Wang ;
Fadi R. Shahroury ;
Zue-Der Huang ;
Hao-Jie Zhan .
Analog Integrated Circuits and Signal Processing, 2009, 58 :183-195
[46]   Inverter-Based Low-Noise Amplifier Topologies for Ultra-Wideband Applications Designed in UMC 0.18μm CMOS technology [J].
Djugova, Alena ;
Radic, Jelena ;
Videnovic-Misic, Mirjana ;
Nagy, Laszlo .
2013 2ND MEDITERRANEAN CONFERENCE ON EMBEDDED COMPUTING (MECO), 2013,
[47]   Design and Analysis of a 28 GHz T/R Front-End Module in 22-nm FD-SOI CMOS Technology [J].
Tang, Xinyan ;
Liu, Yao ;
Mangraviti, Giovanni ;
Zong, Zhiwei ;
Khalaf, Khaled ;
Zhang, Yang ;
Wu, Wei-Min ;
Chen, Shih-Hung ;
Debaillie, Bjorn ;
Wambacq, Piet .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2021, 69 (06) :2841-2853
[48]   A 2-10 GHz Ultra-Wideband Common-Gate Low Noise Amplifier using Body Bias Technique in 0.18 μm CMOS [J].
Mubashir, Syed ;
Singh, Vikram .
PROCEEDINGS OF 2ND INTERNATIONAL CONFERENCE ON 2017 DEVICES FOR INTEGRATED CIRCUIT (DEVIC), 2017, :541-545
[49]   11.81 mW 3.1-10.6 GHz ultra-wideband low-noise amplifier with 2.87 ± 0.19 dB noise figure and 12.52 ± 0.81 dB gain using 0.18 μm CMOS technology [J].
Wu, Chia-Hsing ;
Lin, Yo-Sheng ;
Wang, Chien-Chin .
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2012, 54 (06) :1445-1450
[50]   A 1-V 4.6-μW/channel Fully Differential Neural Recording Front-end IC with Current-controlled Pseudoresistor in 0.18-μm CMOS [J].
Lee, Taeju ;
Hong, Soonyoung ;
Jung, Chongsoo ;
Lee, Junghyup ;
Je, Minkyu .
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2019, 19 (01) :30-41