Design and Analysis of a 21-29-GHz Ultra-Wideband Receiver Front-End in 0.18-μm CMOS Technology

被引：67

作者：

Lin, Yo-Sheng ^{[1
]}

Lee, Jen-How ^{[1
]}

Huang, Sheng-Li ^{[1
]}

Wang, Chiu-Hsuan ^{[1
]}

Wang, Chien-Chin ^{[1
]}

Lu, Shey-Shi ^{[2
,3
]}

机构：

[1] Natl Chi Nan Univ, Dept Elect Engn, Puli 545, Taiwan

[2] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 106, Taiwan

[3] Natl Taiwan Univ, Dept Elect Engn, Taipei 106, Taiwan

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2012年 / 60卷 / 08期

关键词：

Balun; Gilbert-cell mixer; low-noise amplifier (LNA); low power; port-to-port isolation; receiver front-end; DIRECT-CONVERSION RECEIVER; GHZ; TRANSFORMERS; LNA;

D O I：

10.1109/TMTT.2012.2198234

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports the design and analysis of 21-29-GHz CMOS low-noise amplifier (LNA), balun and mixer in a standard 0.18-m CMOS process for ultra-wideband automotive radar systems. To verify the proposed LNA, balun, and mixer architectures, a simplified receiver front-end comprising an LNA, a double-balanced Gilbert-cell-based mixer, and two Marchand baluns was implemented. The wideband Marchand baluns can convert the single RF and local oscillator (LO) signals to nearly perfect differential signals over the 21-29-GHz band. The performance of the mixer is improved with the current-bleeding technique and a parallel resonant inductor at the differential outputs of the RF transconductance stage. Over the 21-29-GHz band, the receiver front-end exhibits excellent noise figure of 4.6 +/- 0.5 dB, conversion gain of 23.7 +/- 1.4 dB, RF port reflection coefficient lower than -8.8 dB, LO-IF isolation lower than -47 dB, LO-RF isolation lower than -55 dB, and RF-IF isolation lower than -35.5 dB. The circuit occupies a chip area of 1.25 x 1.06 mm(2), including the test pads. The dc power dissipation is only 39.2 mW.

引用

页码：2590 / 2604

页数：15

共 32 条

[21] Analysis and Design of a CMOS UWB LNA With Dual-RLC-Branch Wideband Input Matching Network [J].

Lin, Yo-Sheng ;

Chen, Chang-Zhi ;

Yang, Hong-Yu ;

Chen, Chi-Chen ;

Lee, Jen-How ;

Huang, Guo-Wei ;

Lu, Shey-Shi .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2010, 58 (02) :287-296

[22] An analysis of small-signal source-body resistance effect on RF MOSFETs for low-cost system-on-chip (SoC) applications [J].

Lin, YS .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (07) :1442-1451

[23] Monolithic transformers for silicon RF IC design [J].

Long, JR .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2000, 35 (09) :1368-1382

[24]

MacEachern LA, 1998, UNIVERSITY AND INDUSTRY - PARTNERS IN SUCCESS, CONFERENCE PROCEEDINGS VOLS 1-2, P365, DOI 10.1109/CCECE.1998.682760

[25] A 24 GHz Subharmonic Direct Conversion Receiver in 65 nm CMOS [J].

Mazzanti, Andrea ;

Sosio, Marco ;

Repossi, Matteo ;

Svelto, Francesco .

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2011, 58 (01) :88-97

[26]

Natarajan A., 2005, IEEE int. Solid State Circuits Conf. Tech. Dig, V1, P212

[27] Direct parameter extraction on RF-CMOS [J].

Pengg, FX .

2002 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS, 2002, :355-358

[28] Low noise low cost Rx solutions for pulsed 24GHz automotive radar sensors [J].

Pruvost, S. ;

Moquillon, L. ;

Imbs, E. ;

Marchetti, M. ;

Garcia, P. .

2007 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS, 2007, :387-+

[29]

Razavi B., 2008, FUNDAMENTALS MICROEL, P652

[30]

Törmänen M, 2009, IEEE RAD FREQ INTEGR, P503

← 1 2 3 4 →