Wide-band transmittance of one-dimensional photonic crystals carved in Si3N4/SiO2 channel waveguides -: art. no. 211116

被引:9
作者
Gerace, D
Galli, M
Bajoni, D
Guizzetti, G
Andreani, LC
Riboli, F
Melchiorri, M
Daldosso, N
Pavesi, L
Pucker, G
Cabrini, S
Businaro, L
Di Fabrizio, E
机构
[1] Univ Pavia, INFM, CNR, I-27100 Pavia, Italy
[2] Univ Pavia, Dipartimento Fis A Volta, I-27100 Pavia, Italy
[3] Univ Trent, Dipartimento Fis, I-38050 Trento, Italy
[4] IRST, ITC, Microsyst Div, I-38050 Trento, Italy
[5] TASC, Ist Nazl Fis Mat, INFM, CNR,ELETTRA, I-34012 Trieste, Italy
关键词
D O I
10.1063/1.2135408
中图分类号
O59 [应用物理学];
学科分类号
摘要
Experimental and theoretical investigations of photonic crystal (PhC) structures in silicon nitride/silicon dioxide (Si3N4/SiO2) vertical waveguiding geometry are reported. One-dimensional patterns, either periodic or with cavity layers, are carved onto the channel waveguides by using focused ion beam lithography. Broadband transmittance spectroscopy in the visible and near-infrared frequency ranges is employed to show photonic band gap behavior up to the fourth order. For structures with a cavity layer, resonant peaks appear in transmittance spectra within the photonic gaps, in agreement with theory. The results show the interest of Si3N4/SiO2-based PhC waveguides for photonics applications from the infrared up to the visible range. (c) 2005 American Institute of Physics.
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页码:1 / 3
页数:3
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