Intrinsic and light induced gap states in a-Si:H materials and solar cells -: effects of microstructure

被引：28

作者：

Wronski, CR ^{[1
]}

Pearce, JM ^{[1
]}

Deng, J ^{[1
]}

Vlahos, V ^{[1
]}

Collins, RW ^{[1
]}

机构：

[1] Penn State Univ, Ctr Thin Film Devices, University Pk, PA 16802 USA

来源：

THIN SOLID FILMS | 2004年 / 451卷

关键词：

amorphous silicon; microstructure; gap states; light induced defects; solar cells;

D O I：

10.1016/j.tsf.2003.10.129

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effects of microstructure on the gap states of hydrogen diluted and undiluted hydrogenated amorphous silicon (a-Si:H) thin film materials and their solar cells have been investigated. In characterizing the films the commonly used methodology of relating just the magnitudes of photocurrents and subgap absorption, alpha(E), was expanded to take into account states other than those due to dangling bond defects. The electron mobility-lifetime products were characterized as a function of carrier generation rates and analysis was carried out of the entire alpha(E) spectra and their evolution with light induced degradation. Two distinctly different defect states at 1.0 and 1.2 eV from the conduction band and their contributions to carrier recombination were identified and their respective evolution under I sun illumination characterized. Direct correlations were obtained between the recombination in thin films with that of corresponding solar cells. The effects of the difference in microstructure on the changes in these two gap states in films and solar cells were also identified. It is found that improved stability of protocrystalline Si:H can in part be attributed to the reduction of the 1.2 eV defects. It is also shown that ignoring the presence of multiple defects leads to erroneous conclusions being drawn about the stability of a-Si:H and SWE. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：470 / 475

页数：6

共 21 条

[1]

COLLINS RW, 2003, MAT RES SOC P, V762

[2] Absence of carrier recombination associated with the defect pool model in intrinsic amorphous silicon layers:: Evidence from current-voltage characteristics on p-i-n and n-i-p solar cells [J].

Deng, J ;

Pearce, JM ;

Koval, RJ ;

Vlahos, V ;

Collins, RW ;

Wronski, CR .

APPLIED PHYSICS LETTERS, 2003, 82 (18) :3023-3025

[3]

DENG J, 2003, MAT RES SOC P, V762

[4] CONTROL OF PHOTODEGRADATION IN AMORPHOUS-SILICON - THE EFFECT OF DEUTERIUM [J].

GANGULY, G ;

YAMASAKI, S ;

MATSUDA, A .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1991, 63 (01) :281-292

[5] Differences in the densities of charged defect states and kinetics of Staebler-Wronski effect in undoped (nonintrinsic) hydrogenated amorphous silicon thin films [J].

Gunes, M ;

Wronski, CR .

JOURNAL OF APPLIED PHYSICS, 1997, 81 (08) :3526-3536

[6] An improved analysis for band edge optical absorption spectra in hydrogenated amorphous silicon from optical and photoconductivity measurements [J].

Jiao, L ;

Chen, I ;

Collins, RW ;

Wronski, CR ;

Hata, N .

APPLIED PHYSICS LETTERS, 1998, 72 (09) :1057-1059

[7] A new perspective on the characterization of materials for a-Si:H solar cells [J].

Jiao, L ;

Niu, X ;

Lu, Z ;

Wronski, CR ;

Matsuda, A ;

Kamei, T ;

Ganguly, G .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2001, 66 (1-4) :231-237

[8] Initial, rapid light-induced changes in hydrogenated amorphous silicon materials and solar cell structures: The effects of charged defects [J].

Jiao, LH ;

Liu, HY ;

Semoushikina, S ;

Lee, Y ;

Wronski, CR .

APPLIED PHYSICS LETTERS, 1996, 69 (24) :3713-3715

[9]

KOVAL R, 2000, MAT RES SOC P, V609

[10]

PEARCE J, 2001, MAT RES SOC P, V664

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