Numerical simulation of barrier height effect on output parameters, for a a-si:H/nc-Si:H based solar cell

A numerical simulation by AMPS-1D (Analysis of Microelectronic and photonic structures) program has been carried out to examine the role of the front contact barrier heights phi(b0), ITO/P nanocrystalline layer contact, on the performances of a-Si: H n-i-p'-p solar cell with no back reflector. The p'-nc-Si: H buffer layer has been incorporated at the i/p interface in order to passivate the interface defects. Output parameters, like short circuit current (J(SC)), open circuit voltage (V-OC), fill factor (FF) and efficiency (E-ff); for n-i-p'-p structure, are numerically simulated using different values phi(b0). The short circuit current is not very affected by phi(b0). However, for high values of phi(b0) the other output cell parameters increase. The best values of V-OC, FF and Efficiency can be obtained for a value of phi(b0) about 1.65 eV.