The source of holes in p-type InxGa1-xN films

被引：0
|
作者：
Zvanut, M. E. [1 ]
Willoughby, W. R. [1 ]
Koleske, D. D. [2 ]
机构：
[1] Univ Alabama Birmingham, Dept Phys, Birmingham, AL 35294 USA
[2] Sandia Natl Labs, Albuquerque, NM 87185 USA
来源：
GALLIUM NITRIDE MATERIALS AND DEVICES VIII | 2013年 / 8625卷
基金：
美国国家科学基金会;
关键词：
nitride semiconductors; InGaN; Mg dopant; magnetic resonance;
D O I：
10.1117/12.2002569
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Mg-doped InxGa1-xN films are investigated using electron paramagnetic resonance (EPR) spectroscopy. Surprisingly, the number of EPR-detected Mg-related acceptors decreases as x increases from 0.021 to 0.112, but the hole density increases as expected. The observation is attributed to the loss of a magnetic resonance signal from Mg impurities in the vicinity of an In-induced perturbing field. Analysis shows that the number of Mg affected is greater than the amount predicted by considering only next nearest neighbors, but does not extend to all the Mg atoms. The results support the model in which In-induced potential fluctuations perturb the Mg dopant.
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页数：5
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