The source of holes in p-type InxGa1-xN films

被引：0
|
作者：
Zvanut, M. E. [1 ]
Willoughby, W. R. [1 ]
Koleske, D. D. [2 ]
机构：
[1] Univ Alabama Birmingham, Dept Phys, Birmingham, AL 35294 USA
[2] Sandia Natl Labs, Albuquerque, NM 87185 USA
来源：
GALLIUM NITRIDE MATERIALS AND DEVICES VIII | 2013年 / 8625卷
基金：
美国国家科学基金会;
关键词：
nitride semiconductors; InGaN; Mg dopant; magnetic resonance;
D O I：
10.1117/12.2002569
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Mg-doped InxGa1-xN films are investigated using electron paramagnetic resonance (EPR) spectroscopy. Surprisingly, the number of EPR-detected Mg-related acceptors decreases as x increases from 0.021 to 0.112, but the hole density increases as expected. The observation is attributed to the loss of a magnetic resonance signal from Mg impurities in the vicinity of an In-induced perturbing field. Analysis shows that the number of Mg affected is greater than the amount predicted by considering only next nearest neighbors, but does not extend to all the Mg atoms. The results support the model in which In-induced potential fluctuations perturb the Mg dopant.
引用
收藏
页数：5
相关论文
共 50 条
  • [21] Hydride vapor phase epitaxy of InxGa1-xN thin films
    Sato, Y
    Sato, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (7A): : 4295 - 4296
  • [22] Implant isolation of InxAl1-xN and InxGa1-xN
    Vartuli, CB
    Pearton, SJ
    Abernathy, CR
    MacKenzie, JD
    Zolper, JC
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (06): : 2293 - 2296
  • [23] The composition dependence of the InxGa1-xN bandgap
    O'Donnell, KP
    Fernandez-Torrente, I
    Edwards, PR
    Martin, RW
    JOURNAL OF CRYSTAL GROWTH, 2004, 269 (01) : 100 - 105
  • [24] Implant isolation of InxAl1-xN and InxGa1-xN
    Vartuli, C.B.
    Pearton, S.J.
    Abernathy, C.R.
    MacKenzie, J.D.
    Zolper, J.C.
    Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1995, 13 (06):
  • [25] Investigation of composition fluctuations in InxGa1-xN
    Neubauer, B
    Hahn, E
    Rosenauer, A
    Gerthsen, D
    Heuken, M
    MICROSCOPY OF SEMICONDUCTING MATERIALS 1999, PROCEEDINGS, 1999, (164): : 407 - 410
  • [26] Bowing parameter of zincblende InxGa1-xN
    Kuo, Yen-Kuang
    Chu, Han-Yi
    Yen, Sheng-Horng
    Liou, Bo-Ting
    Chen, Mei-Ling
    OPTICS COMMUNICATIONS, 2007, 280 (01) : 153 - 156
  • [27] Tunnel Optical Radiation in InxGa1-xN
    Alexandrov, Dimiter
    Skerget, Shawn
    INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS 2013, 2014, 1583 : 305 - 309
  • [28] Thermal conduction in InxGa1-xN film
    Barman, Saswati
    EPL, 2014, 107 (05)
  • [29] Thermoelectric properties of InxGa1-xN alloys
    Pantha, B. N.
    Dahal, R.
    Li, J.
    Lin, J. Y.
    Jiang, H. X.
    Pomrenke, G.
    APPLIED PHYSICS LETTERS, 2008, 92 (04)
  • [30] InxGa1-xN refractive index calculations
    Anani, M.
    Abid, H.
    Chama, Z.
    Mathieu, C.
    Sayede, A.
    Khelifa, B.
    MICROELECTRONICS JOURNAL, 2007, 38 (02) : 262 - 266
12345