Terahertz microscopy of charge carriers in semiconductors

被引：47
作者：
Buersgens, F
Kersting, R
Chen, HT
机构：
[1] Univ Munich, Dept Phys, D-80799 Munich, Germany
[2] Rensselaer Polytech Inst, Dept Phys, Troy, NY 12180 USA
来源：
APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 11期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1063/1.2186743
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on the application of apertureless THz near-field microscopy for sensing charge carriers in semiconductors. This technique allows for contactless probing of electron concentrations on a micrometer scale. Experimental data and model calculations indicate that as few as about 5000 electrons can be detected in a GaAs structure. (c) 2006 American Institute of Physics.
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页数：3
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