Terahertz microscopy of charge carriers in semiconductors

被引:47
作者
Buersgens, F
Kersting, R
Chen, HT
机构
[1] Univ Munich, Dept Phys, D-80799 Munich, Germany
[2] Rensselaer Polytech Inst, Dept Phys, Troy, NY 12180 USA
基金
美国国家科学基金会;
关键词
D O I
10.1063/1.2186743
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on the application of apertureless THz near-field microscopy for sensing charge carriers in semiconductors. This technique allows for contactless probing of electron concentrations on a micrometer scale. Experimental data and model calculations indicate that as few as about 5000 electrons can be detected in a GaAs structure. (c) 2006 American Institute of Physics.
引用
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页数:3
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