Illumination as a tool to investigate the quantum mobility of the two-dimensional electron gas in a Si δ-doped GaAs/In0.15Ga0.85As/GaAs quantum well -: art. no. 075320

被引：11

作者：

Cavalheiro, A

da Silva, ECF

Takahashi, EK

Quivy, AA

Leite, JR

Meneses, EA

机构：

[1] Univ Fed Uberlandia, Dept Ciencias Fis, BR-38400902 Uberlandia, MG, Brazil

[2] Univ Sao Paulo, Inst Fis, BR-05315970 Sao Paulo, Brazil

[3] Univ Estadual Campinas, Inst Fis Gleb Wataghin, BR-17083970 Campinas, SP, Brazil

来源：

PHYSICAL REVIEW B | 2002年 / 65卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.65.075320

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A systematic investigation of the transport properties of a GaAs/InGaAs quantum well electronically coupled to a silicon delta-doped layer was carried out as a function of the illumination time of the sample. Shubnikov-de Haas measurements allowed the determination of the quantum mobility of each occupied subband that could be accurately analyzed from the dark condition up to the continuous-illumination regime. The origin of the persistent-photoconductivity effect observed in the sample could be unambiguously determined and was confirmed by self-consistent calculations.

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页码：1 / 6

页数：6

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