Dependency of threshold switching on density of localized states of Ge2Sb2Te5 thin films for phase change random access memory

被引：15

作者：

Ryu, Seung Wook ^{[1
,2
]}

Lee, Jong Ho ^{[1
,2
]}

Ahn, Yong Bae ^{[1
,2
]}

Kim, Choon Hwan ^{[3
]}

Choi, Byung Joon ^{[1
,2
]}

Hwang, Cheol Seong ^{[1
,2
]}

Kim, Hyeong Joon ^{[1
,2
]}

机构：

[1] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South Korea

[2] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151744, South Korea

[3] Hynix Semicond Inc, Ichon 467701, Kyoungki Do, South Korea

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 17期

关键词：

D O I：

10.1063/1.3012366

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The threshold switching of Ge2Sb2Te5 (GST) films for phase change random access memory applications was investigated by measuring the variation in the threshold voltage (V-T) with the crystallinity of the GST films and photon energy absorption spectra. As the GST film was amorphized, V-T increased to approximately 1 V and its electrical resistance increased. The optical band gap and Urbach edge of the GST increased from 0.66 to 0.97 eV and from 12 to 65 meV, respectively, upon its amorphization. It was experimentally confirmed that the threshold switching is associated with the density of localized states of the GST. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3012366]

引用

页数：3

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