Growth of di-indenoperylene single crystals on amino-functionalized SiO2 surfaces

被引：9
作者：
Zhang, Xue Na [1 ]
Barrena, Esther [1 ,2 ]
de Oteyza, Dimas Garcia [1 ]
De Souza, Emerson [1 ]
Dosch, Helmut [1 ,2 ]
机构：
[1] Max Planck Inst Met Res, D-70569 Stuttgart, Germany
[2] Univ Stuttgart, Inst Theoret & Angew Phys, D-70550 Stuttgart, Germany
来源：
JOURNAL OF APPLIED PHYSICS | 2008年 / 104卷 / 10期
关键词：
annealing; atomic force microscopy; monolayers; organic semiconductors; self-assembly; semiconductor growth; semiconductor thin films; semiconductor-insulator boundaries; silicon compounds; surface morphology; wetting; X-ray diffraction;
D O I：
10.1063/1.2977726
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report a combined atomic force microscopy/x-ray diffraction study of the growth and dewetting of the organic molecule di-indenoperylene (DIP) on SiO2 surfaces that have been functionalized with an amino-terminated self-assembled monolayer of 3-aminopropyltriethoxysilane [APS, (CH3CH2O)(3)Si(CH2)(3)NH2]. We disclose a transition of DIP thin films from two-dimensional to three-dimensional growth at 80 degrees C, which is associated with a change in the surface morphology of APS during the annealing of the substrates. This growth scenario gives rise to the formation of micron sized DIP single crystals, which could be potentially interesting for future application in electronic devices.
引用
收藏
页数：4
相关论文
共 38 条
[1]  
[Anonymous], UNPUB
[2]   Organic field-effect transistors with high mobility based on copper phthalocyanine [J].
Bao, Z ;
Lovinger, AJ ;
Dodabalapur, A .
APPLIED PHYSICS LETTERS, 1996, 69 (20) :3066-3068
[3]   Patterning organic single-crystal transistor arrays [J].
Briseno, Alejandro L. ;
Mannsfeld, Stefan C. B. ;
Ling, Mang M. ;
Liu, Shuhong ;
Tseng, Ricky J. ;
Reese, Colin ;
Roberts, Mark E. ;
Yang, Yang ;
Wudl, Fred ;
Bao, Zhenan .
NATURE, 2006, 444 (7121) :913-917
[4]   Surface free energy and wettability of silyl layers on silicon determined from contact angle hysteresis [J].
Chibowski, EJ .
ADVANCES IN COLLOID AND INTERFACE SCIENCE, 2005, 113 (2-3) :121-131
[5]   Controlled enhancement of the electron field-effect mobility of F16CuPc thin-film transistors by use of functionalized SiO2 substrates -: art. no. 183504 [J].
de Oteyza, DG ;
Barrena, E ;
Ossó, JO ;
Dosch, H ;
Meyer, S ;
Pflaum, J .
APPLIED PHYSICS LETTERS, 2005, 87 (18) :1-3
[6]   Observation of competing modes in the growth of diindenoperylene on SiO2 [J].
Dürr, AC ;
Nickel, B ;
Shan-Fia, V ;
Täffner, U ;
Dosch, H .
THIN SOLID FILMS, 2006, 503 (1-2) :127-132
[7]   Rapid roughening in thin film growth of an organic semiconductor (diindenoperylene) -: art. no. 016104 [J].
Dürr, AC ;
Schreiber, F ;
Ritley, KA ;
Kruppa, V ;
Krug, J ;
Dosch, H ;
Struth, B .
PHYSICAL REVIEW LETTERS, 2003, 90 (01) :4
[8]   High structural order in thin films of the organic semiconductor diindenoperylene [J].
Dürr, AC ;
Schreiber, F ;
Münch, M ;
Karl, N ;
Krause, B ;
Kruppa, V ;
Dosch, H .
APPLIED PHYSICS LETTERS, 2002, 81 (12) :2276-2278
[9]   Thin-film transistors based on well-ordered thermally evaporated naphthacene films [J].
Gundlach, DJ ;
Nichols, JA ;
Zhou, L ;
Jackson, TN .
APPLIED PHYSICS LETTERS, 2002, 80 (16) :2925-2927
[10]   C-60 THIN-FILM TRANSISTORS [J].
HADDON, RC ;
PEREL, AS ;
MORRIS, RC ;
PALSTRA, TTM ;
HEBARD, AF ;
FLEMING, RM .
APPLIED PHYSICS LETTERS, 1995, 67 (01) :121-123
1234