Polycrystalline SiC as source material for the growth of fluorescent SiC layers

被引：9

作者：

Kaiser, Michl ^{[1
]}

Hupfer, Thomas ^{[1
]}

Jokubavicus, Valdas ^{[2
]}

Schimmel, Saskia ^{[1
,2
]}

Syvajarvi, Mikael ^{[2
]}

Ou, Yiyu ^{[3
]}

Ou, Haiyan ^{[3
]}

Linnarsson, Margareta K. ^{[4
]}

Wellmann, Peter ^{[1
]}

机构：

[1] Univ Erlangen Nurnberg, Dept Mat Sci 6, Martensstr 7, D-91058 Erlangen, Germany

[2] Linkoping Univ, Dept Phys, Chem & Biol, SE-58183 Linkoping, Sweden

[3] Tech Univ Denmark, Dept Photon Engn, Copenhagen, Denmark

[4] KTH Royal Inst Technol, Integrated Devices & Circuits, SE-16440 Kista, Sweden

来源：

SILICON CARBIDE AND RELATED MATERIALS 2012 | 2013年 / 740-742卷

基金：

瑞典研究理事会;

关键词：

Silicon Carbide; Orientation; PVT; Polycrystalline; Doping; DONOR;

D O I：

10.4028/www.scientific.net/MSF.740-742.39

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Polycrystalline doped SiC act as source for fluorescent SiC. We have studied the growth of individual grains with different polytypes in the source material. We show an evolution and orientation of grains of different polytypes in polycrystalline SiC ingots grown by the Physical Vapor Transport method. The grain influence on the growth rate of fluorescent SiC layers grown by a sublimation epitaxial process is discussed in respect of surface kinetics.

引用

页码：39 / +

页数：2

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