Heterostructure ReS2/GaAs Saturable Absorber Passively Q-Switched Nd:YVO4 Laser

被引：8

作者：

Liu, Lijie ^{[1
]}

Chu, Hongwei ^{[1
]}

Zhang, Xiaodong ^{[1
]}

Pan, Han ^{[1
]}

Zhao, Shengzhi ^{[1
]}

Li, Dechun ^{[1
]}

机构：

[1] Shandong Univ, Sch Informat Sci & Engn, Qingdao 266000, Shandong, Peoples R China

来源：

NANOSCALE RESEARCH LETTERS | 2019年 / 14卷 / 1期

基金：

美国国家科学基金会;

关键词：

Q-switching lasers; Two-dimensional nanomaterials; Saturable absorbers; RES2; ANISOTROPY;

D O I：

10.1186/s11671-019-2953-7

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Heterostructure ReS2/GaAs was fabricated on a 110-m (111) GaAs wafer by chemical vapor deposition method. Passively Q-switched Nd:YVO4 laser was demonstrated by employing heterostructure ReS2/GaAs as a saturable absorber (SA). The shortest pulse width of 51.3ns with a repetition rate of 452kHz was obtained, corresponding to the pulse energy of 465nJ and the peak power of 9.1W. In comparison with the ReS2 Q-switched laser and the GaAs Q-switched laser, the heterostructer ReS2/GaAs Q-switched laser can generate shorter pulse duration and higher pulse energy.

引用

页数：6