Heterostructure ReS2/GaAs Saturable Absorber Passively Q-Switched Nd:YVO4 Laser

被引：8
|
作者：
Liu, Lijie [1 ]
Chu, Hongwei [1 ]
Zhang, Xiaodong [1 ]
Pan, Han [1 ]
Zhao, Shengzhi [1 ]
Li, Dechun [1 ]
机构：
[1] Shandong Univ, Sch Informat Sci & Engn, Qingdao 266000, Shandong, Peoples R China
来源：
NANOSCALE RESEARCH LETTERS | 2019年 / 14卷 / 1期
基金：
美国国家科学基金会;
关键词：
Q-switching lasers; Two-dimensional nanomaterials; Saturable absorbers; RES2; ANISOTROPY;
D O I：
10.1186/s11671-019-2953-7
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Heterostructure ReS2/GaAs was fabricated on a 110-m (111) GaAs wafer by chemical vapor deposition method. Passively Q-switched Nd:YVO4 laser was demonstrated by employing heterostructure ReS2/GaAs as a saturable absorber (SA). The shortest pulse width of 51.3ns with a repetition rate of 452kHz was obtained, corresponding to the pulse energy of 465nJ and the peak power of 9.1W. In comparison with the ReS2 Q-switched laser and the GaAs Q-switched laser, the heterostructer ReS2/GaAs Q-switched laser can generate shorter pulse duration and higher pulse energy.
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页数：6
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