Low-temperature activation of Mg-doped GaN with Pd thin films

被引：0

作者：

Waki, I

Fujioka, H

Oshima, M

Miki, H

Okuyama, M

机构：

[1] Univ Tokyo, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, Japan

[2] Showa Denko Co Ltd, Cent Res Lab, Chichibu Res Lab, Chichibu, Saitama 3691871, Japan

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 2001年 / 228卷 / 02期

关键词：

D O I：

10.1002/1521-3951(200111)228:2<391::AID-PSSB391>3.3.CO;2-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The activation of metalorganic chemical vapor deposition (MOCVD)-grown Mg-doped GaN by N-2 annealing with thin Pd films has been investigated. p-type GaN with a hole concentration of 7 x 10(16) cm(-3) has been obtained at an annealing temperature as low as 200 degreesC using this technique. Thermal desorption spectroscopy (TDS) measurements have revealed that hydrogen is effectively removed from the Mg-doped GaN layer by the use of the Pd film.

引用

页码：391 / 393

页数：3

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