Interfacial Layer Control by Dry Cleaning Technology for Polycrystalline and Single Crystalline Silicon Growth

被引：3

作者：

Im, Dong-Hyun ^{[1
,2
]}

Lee, Kong-Soo ^{[2
]}

Kang, Yoongoo ^{[2
]}

Jeong, Myoungho ^{[1
,3
]}

Park, Kwang Wuk ^{[1
]}

Lee, Soon-Gun ^{[2
]}

Ma, Jin-Won ^{[2
]}

Kim, Youngseok ^{[2
]}

Kim, Bonghyun ^{[2
]}

Im, Ki-Vin ^{[2
]}

Lim, Hanjin ^{[2
]}

Lee, Jeong Yong ^{[1
,3
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Daejeon 305701, South Korea

[2] Samsung Elect Co Ltd, Semicond R&D Ctr, Proc Dev Team 2, Hwasung 445330, South Korea

[3] Inst for Basic Sci Korea, Ctr Nanomat & Chem React, Daejeon 305701, South Korea

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2016年 / 16卷 / 05期

关键词：

Silicon; Surface; Dry Cleaning; Interface; Polysilicon; Residual Fluorine; SURFACES; NH3/NF3; REMOVAL;

D O I：

10.1166/jnn.2016.12255

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Native oxide removal prior to poly-Si contact and epitaxial growth of Si is the most critical technology to ensure process and device performances of poly-Si plugs and selective epitaxial growth (SEG) layers for DRAM, flash memory, and logic device. Recently, dry cleaning process for interfacial oxide removal has attracted a world-wide attention due to its superior passivation properties to conventional wet cleaning processes. In this study, we investigated the surface states of Si substrate during and after dry cleaning process, and the role of atomic elements including fluorine and hydrogen on the properties of subsequent deposited silicon layer using SIMS, XPS, and TEM analysis. The controlling of residual fluorine on the Si surface after dry cleaning is a key factor for clean interface. The mechanism of native oxide re-growth caused by residual fluorine after dry cleaning is proposed based on analytical results.

引用

页码：4906 / 4913

页数：8

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