Tailoring of BST and MgO layers for phase shifter applications

被引：9
作者：
Jain, M [1 ]
Majumder, SB
Katiyar, RS
Bhalla, AS
Miranda, FA
Van Keuls, FW
机构：
[1] Univ Puerto Rico, Dept Phys, Rio Piedras, PR 00931 USA
[2] Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA
[3] NASA, Glenn Res Ctr, Cleveland, OH 44135 USA
[4] Ohio Aerosp Inst, Cleveland, OH 44142 USA
来源：
INTEGRATED FERROELECTRICS | 2004年 / 60卷
关键词：
BST; sol-gel; thin film; phase-shifter; microwave; heterostructure;
D O I：
10.1080/10584580490441548
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Sol-gel technique has been utilized to deposit heterostructured Ba0.5Sr0.5TiO3 :MgO (BST:MgO) films with different BST/MgO layer sequences and thicknesses in order to achieve enhanced microwave properties. The correlation between the structure, microstructure, and the dielectric properties are presented. Eight element coupled microstrip phase-shifters were fabricated on these films and the performance of these coupled microstrip phase-shifters at microwave frequencies was evaluated in the 15-17 GHz frequency range. The high frequency figure of merit (kappa), dramatically improved to 87degrees/dB in the optimized heterostructured composite thin film measured at 533 kV/cm, which is the highest known value measured in the Ku band region for BST based thin films. These results represent the current state of the art technology.
引用
收藏
页码：59 / 68
页数：10
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