Bipolar resistive switching of Au/NiOx/Ni/Au heterostructure nanowires

被引：16

作者：

Brivio, S. ^{[1
]}

Perego, D. ^{[2
]}

Tallarida, G. ^{[1
]}

Bestetti, M. ^{[2
]}

Franz, S. ^{[2
]}

Spiga, S. ^{[1
]}

机构：

[1] IMM CNR, Lab MDM, I-20864 Agrate Brianza, MB, Italy

[2] Politecn Milan, Dipartimento Chim, I-20131 Milan, MI, Italy

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 15期

关键词：

CORE-SHELL NANOWIRES; OXIDE NANOWIRE; MEMORY;

D O I：

10.1063/1.4824763

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Arrays of Au/NiOx/Ni/Au nanowires with a diameter of 50 nm were characterized by conductive atomic force microscopy, which was used to probe the electrical behavior of single nanowires still included in the array. A bipolar switching of the single Au/NiOx/Ni/Au nanowires is demonstrated and is attributed to the choice of an asymmetric couple of electrode materials and, possibly, to a non-uniform Ni oxidation profile inside the NiOx segments. An analysis of the conduction mechanism in a single nanowire is presented to further support this conclusion. (C) 2013 AIP Publishing LLC.

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页数：4

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