Conductivity of boron-doped polycrystalline diamond films: influence of specific boron defects

被引：62

作者：

Ashcheulov, P. ^{[1
,2
]}

Sebera, J. ^{[1
]}

Kovalenko, A. ^{[1
]}

Petrak, V. ^{[1
,3
]}

Fendrych, F. ^{[1
]}

Nesladek, M. ^{[4
]}

Taylor, A. ^{[1
]}

Zivcova, Z. Vlckova ^{[5
]}

Frank, O. ^{[5
]}

Kavan, L. ^{[5
]}

Dracinsky, M. ^{[6
]}

Hubik, P. ^{[7
]}

Vacik, J. ^{[8
]}

Kraus, I. ^{[2
]}

Kratochvilova, I. ^{[1
]}

机构：

[1] Acad Sci Czech Republ, Inst Phys, Vvi, Prague 18221 8, Czech Republic

[2] Czech Tech Univ, Fac Nucl Phys & Phys Engn, Prague 16000 6, Czech Republic

[3] Czech Tech Univ, Fac Biomed Engn, Kladno 27201, Czech Republic

[4] Hasselt Univ, Inst Mat Res IMO, B-3590 Diepenbeek, Belgium

[5] AS CR, J Heyrovsky Inst Phys Chem, Vvi, Prague 18223 8, Czech Republic

[6] Acad Sci Czech Republ, Inst Organ Chem & Biochem, Vvi, CR-16610 Prague, Czech Republic

[7] Acad Sci Czech Republ, Inst Phys, Vvi, CR-16200 Prague 6, Czech Republic

[8] Acad Sci Czech Republ, Inst Nucl Phys, Vvi, Rez Near Prague 25068, Czech Republic

来源：

EUROPEAN PHYSICAL JOURNAL B | 2013年 / 86卷 / 10期

关键词：

NANOCRYSTALLINE DIAMOND; POPULATION ANALYSIS; 1ST PRINCIPLES; RAMAN; NANODIAMOND; SUPERCONDUCTIVITY; STATES; DONOR;

D O I：

10.1140/epjb/e2013-40528-x

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The resistivity of boron doped polycrystalline diamond films changes with boron content in a very complex way with many unclear factors. From the large number of parameters affecting boron doped polycrystalline diamond film's conductivity we focused on the role of boron atoms inside diamond grains in terms of boron contribution to the continuum of diamond electronic states. Using a combination of theoretical and experimental techniques (plane-wave Density Functional Theory, Neutron Depth Profiling, resistivity and Hall effect measurements, Atomic Force Microscopy and Raman spectroscopy) we studied a wide range of B defect parameters - the boron concentration, location, structure, free hole concentration and mobility. The main goal and novelty of our work was to find the influence of B defects (structure, interactions, charge localisation and spins) in highly B-doped diamonds - close or above the metal-insulator transition - on the complex material charge transport mechanisms.

引用

页数：9

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