Effects of impurity-free intermixing on InGaAs/GaAs/AlGaAs broad-area diode laser characteristics

被引：0

作者：

Zhao, YR ^{[1
]}

Xin, YC ^{[1
]}

Wang, RH ^{[1
]}

Vilela, MF ^{[1
]}

Smolyakov, GA ^{[1
]}

Osinski, M ^{[1
]}

机构：

[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA

来源：

DESIGN, FABRICATION, AND CHARACTERIZATION OF PHOTONIC DEVICES II | 2001年 / 4594卷

关键词：

quantum well intermixing; impurity-free vacancy diffusion; InGaAs/GaAs strained quantum well lasers;

D O I：

10.1117/12.446551

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Broad-area InGaAs/GaAs/AlGaAs double-quantum-well graded-index separate-confinement heterostructure diode lasers with non-intermixed and intermixed active regions were fabricated and characterized. Their light-current characteristics were used to extract information about the effects of impurity-free vacancy diffusion intermixing process on threshold current density, internal optical loss, internal quantum efficiency, material gain, etc. Comparison between these parameters indicates comparable device performance, even though lasers with intermixed active region underwent annealing at 1000 degreesC for 30 s and showed 42 nm wavelength blueshift.

引用

页码：237 / 249

页数：13

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