Vanadium oxide nanowire phase and orientation analyzed by Raman spectroscopy

被引：74

作者：

Chou, J. Y. ^{[1
]}

Lensch-Falk, J. L. ^{[1
]}

Hemesath, E. R. ^{[1
]}

Lauhon, L. J. ^{[1
]}

机构：

[1] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 105卷 / 03期

基金：

美国国家科学基金会;

关键词：

crystal orientation; electron diffraction; nanotechnology; nanowires; polarisation; Raman spectra; semiconductor growth; semiconductor quantum wires; vanadium compounds; vapour deposition; THIN-FILMS; SCATTERING; VO2; TRANSITION; GROWTH;

D O I：

10.1063/1.3075763

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Phase-selective growth of VO2 and V2O5 nanowires was realized via catalyst-free physical vapor deposition from bulk VO2 powder. Single nanowire Raman spectroscopy was used to analyze the distribution of the vanadium oxide phases within the reactor. VO2 (V2O5) nanowires were identified by characteristic peaks at 197, 224, and 620 cm(-1) (149, 700, and 994 cm(-1)). Electron diffraction and polarization-dependent Raman spectra indicated that the growth directions of VO2 and V2O5 nanowires were [100] and [010]. Analysis of Raman spectra in two polarization configurations is sufficient to distinguish between low-index nanowire growth directions for the V2O5 phase. Single nanostructure Raman measurements thus provide a means to rapidly analyze the phase and growth direction of anisotropic nanostructures.

引用

页数：6

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