New technological development for far infrared bolometer arrays

CEA.S/DAPNIA/DSM and LETI/CEA.G are developing since 1996 a new technology for the realization of far infrared bolometer arrays sensitive in submillimeter wavelength range. The operating temperature is 0.3 Kelvin. Microtechnologies on silicon and flip-chip techniques are used for the detector fabrication and CMOS technology is used for the multiplexer and the readout integrated circuit. We present the concept that we have defined for the focal plane architecture and the readout principle design for 16 x 16 or 32 x 32 array. The first experimental results obtained on optical, electrical and thermal parameters are presented.