Low power, high gain, low noise amplifier (LNA) for ultra wide-band applications

被引：6

作者：

Iji, Ayobami ^{[1
]}

Zhu, Xie ^{[1
]}

Heimlich, Michael ^{[1
]}

机构：

[1] MacQuarie Univ Sydney, Dept Elect Engn, Sydney, NSW, Australia

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2013年 / 55卷 / 06期

关键词：

low noise amplifier; improved linearity; high gain amplifier; ultra wideband;

D O I：

10.1002/mop.27588

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

One of the important components of a receiver is the low noise amplifier (LNA). The challenges of LNA design include ability to achieve high gain, low noise figure, and better linearity at low power consumption within the required frequency. In this article, our design is based on Impulse Response (IR) Ultra Wide-Band (UWB) transceiver operating at 3.14.6 GHz. Hence, the LNA designed has been optimized for low noise figure, considerably high gain and better linearity at low power consumption, which make it suitable for implantable radio application. The process technology used here is 0.25 m CMOS Silanna process. (c) 2013 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:13991401, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27588

引用

页码：1399 / 1401

页数：3

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