Electrically-pumped vertical-cavity lasers with AlxOy-GaAs reflectors

被引：47

作者：

MacDougal, MH

Yang, GM

Bond, AE

Lin, CK

Tishinin, D

Dapkus, PD

机构：

[1] Natl. Ctr. Intgd. Photonic Technol., Dept. of Elec. Eng./Electrophysics, University of Southern California, Los Angeles

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1996年 / 8卷 / 03期

关键词：

D O I：

10.1109/68.481100

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have fabricated the first electrically-pumped vertical-cavity surface-emitting lasers (VCSEL's) which use oxide-based distributed Bragg reflectors (DBR's) on both sides of the gain region, They require a third the epitaxial growth time of VCSEL's with semiconductor DBR's, We obtain threshold currents as low as 160 mu A in VCSEL's with an active area of 8 mu m x 8 mu m using a two quantum well InGaAs-GaAs active region, By etching away mirror pairs from the top reflector, quantum efficiencies as high as 61% are attained, while still maintaining a low threshold current of 290 mu A.

引用

页码：310 / 312

页数：3

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