Surface tension of liquid silicon: High or low value?

被引:34
|
作者
Eustathopoulos, Nicolas [1 ]
Drevet, Beatrice [2 ]
机构
[1] SIMAP Grenoble INP, F-38402 St Martin Dheres, France
[2] Savoie Technolac, INES, CEA LITEN, F-73377 Le Bourget Du Lac, France
关键词
Surfaces; Semiconducting silicon; OXYGEN PARTIAL-PRESSURE; OSCILLATING DROP METHOD; MOLTEN SILICON; ELECTROMAGNETIC-LEVITATION; TEMPERATURE-COEFFICIENT; MARANGONI FLOW; ALLOYS; METALS; SI; MICROGRAVITY;
D O I
10.1016/j.jcrysgro.2013.02.010
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Sixty years after the first measurement of capillary properties of silicon, experimental results on the surface tension and temperature coefficient of liquid silicon are still divergent. The reason for this persisting divergence is discussed by examining the effect on these quantities of (i) oxygen contained as an impurity in the gas, (ii) impurities in Si and (iii) contamination by the supporting material (substrate or crucible). From the analysis of experimental data, the following expression is derived for the temperature dependence of the surface tension sigma: sigma-(mN/m) = 840(+/- 45) 0.19(+/- 0.09)(T(K) - 1685). (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码:77 / 83
页数:7
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