Quantum beat of excitons in spherical semiconductor quantum dots

被引：8
|
作者：
Dinh Nhu Thao [1 ]
Le Thi Ngoc Bao [1 ,2 ]
机构：
[1] Hue Univ, Hue Univ Educ, 34 Le Loi St, Hue City, Vietnam
[2] Hue Univ, Hue Univ Sci, 77 Nguyen Hue St, Hue City, Vietnam
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2020年 / 146卷
关键词：
Quantum beat; Exciton; Semiconductor quantum dot; Rabi frequency; POLARIZATION INTERFERENCE; HEAVY-HOLE; OSCILLATIONS; SPECTROSCOPY; ABSORPTION; COHERENCE; EMISSION; ENERGY; LIGHT;
D O I：
10.1016/j.spmi.2020.106675
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
This article reports a study on quantum beat of excitons in spherical semiconductor quantum dots. With renormalized wavefunction formulation for a three-level model including ground state level and two excited ones of exciton, quantum beat of excitons is observed to be twice the electron Rabi frequency while a strong resonant pump laser is connecting two exciton excited levels. In addition, dependences of characteristics of quantum beat of excitons on dot radius and pump laser detuning are examined.
引用
收藏
页数：12
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