Indium segregation and enrichment in coherent InxGa1-xAs/GaAs quantum dots

被引：86

作者：

Liao, XZ ^{[1
]}

Zou, J

Cockayne, DJH

Leon, R

Lobo, C

机构：

[1] Univ Sydney, Australian Key Ctr Microscopy & Microanal, Sydney, NSW 2006, Australia

[2] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA

[3] Australian Natl Univ, Dept Elect Mat Engn, Canberra, ACT 0200, Australia

来源：

PHYSICAL REVIEW LETTERS | 1999年 / 82卷 / 25期

关键词：

D O I：

10.1103/PhysRevLett.82.5148

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Significant differences in the image features of InxGa1-xAs quantum dots (QDs) grown on (001) and vicinal (001) GaAs were seen in [001] on-zone bright-held transmission electron microscope images. Simulated images were obtained by modeling the strain field distribution of the QDs with finite element analysis and then using this model in dynamical electron diffraction contrast simulations. Comparison of the experimental images and the simulated images shows that (i) In segregation exists in the QDs and (ii) the average In content of the QDs is higher than the average In content of the film.

引用

页码：5148 / 5151

页数：4

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