Oxidation behavior of Cr-Al-N-O thin films prepared by pulsed laser deposition

被引：25
|
作者：
Hirai, M [1 ]
Saito, H [1 ]
Suzuki, T [1 ]
Suematsu, H [1 ]
Jiang, WH [1 ]
Yatsui, K [1 ]
机构：
[1] Nagaoka Univ Technol, Extreme Energy Dens Res Inst, Nagaoka, Niigata 9402188, Japan
来源：
THIN SOLID FILMS | 2002年 / 407卷 / 1-2期
关键词：
chromium aluminum oxynitride; coatings; NaCl structure; oxidation;
D O I：
10.1016/S0040-6090(02)00024-X
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Chromium aluminum oxynitride (Cr-Al-N-O) films have been successfully prepared by pulsed laser deposition (PLD). Experiments were carried out by changing the surface area ratio of the target [SR = S-AlN/(S-Cr2N+S-AlN)] under a pressure of 1 x 10(-5) torr. The composition of the film prepared at fluence of F = 5 J/cm(2) and Si-R = 75% was determined to be Cr0.11Al0.39N0.25O0.25 by Rutherford backscattering spectroscopy (RBS). The oxidation of the Cr-Al-N-O film was observed above 900 degreesC. Additionally, the film heat-treated at 1100 degreesC consisted mainly of B1 (NaCl) structure. From the result of grazing angle X-ray difftactometry (GXRD), the oxidation resistant of Cr-Al-N-O film was found to be improved due to the fact that Cr2O3 and alpha-Al2O3 is formed near the film surface. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：122 / 125
页数：4
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