Oxidation behavior of Cr-Al-N-O thin films prepared by pulsed laser deposition

被引：25

作者：

Hirai, M ^{[1
]}

Saito, H ^{[1
]}

Suzuki, T ^{[1
]}

Suematsu, H ^{[1
]}

Jiang, WH ^{[1
]}

Yatsui, K ^{[1
]}

机构：

[1] Nagaoka Univ Technol, Extreme Energy Dens Res Inst, Nagaoka, Niigata 9402188, Japan

来源：

THIN SOLID FILMS | 2002年 / 407卷 / 1-2期

关键词：

chromium aluminum oxynitride; coatings; NaCl structure; oxidation;

D O I：

10.1016/S0040-6090(02)00024-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Chromium aluminum oxynitride (Cr-Al-N-O) films have been successfully prepared by pulsed laser deposition (PLD). Experiments were carried out by changing the surface area ratio of the target [SR = S-AlN/(S-Cr2N+S-AlN)] under a pressure of 1 x 10(-5) torr. The composition of the film prepared at fluence of F = 5 J/cm(2) and Si-R = 75% was determined to be Cr0.11Al0.39N0.25O0.25 by Rutherford backscattering spectroscopy (RBS). The oxidation of the Cr-Al-N-O film was observed above 900 degreesC. Additionally, the film heat-treated at 1100 degreesC consisted mainly of B1 (NaCl) structure. From the result of grazing angle X-ray difftactometry (GXRD), the oxidation resistant of Cr-Al-N-O film was found to be improved due to the fact that Cr2O3 and alpha-Al2O3 is formed near the film surface. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：122 / 125

页数：4

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