SiO2/4H-SiC interface doping during post-deposition-annealing of the oxide in N2O or POCl3

被引：62
|
作者：
Fiorenza, P. [1 ]
Giannazzo, F. [1 ]
Vivona, M. [1 ]
La Magna, A. [1 ]
Roccaforte, F. [1 ]
机构：
[1] CNR IMM, I-95121 Catania, Italy
来源：
APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 15期
关键词：
4H-SIC MOSFETS; NITRIC-OXIDE; PHOSPHORUS; MOBILITY; IMPLANTATION; PASSIVATION; TEMPERATURE; CARBIDE; DEVICES; STATES;
D O I：
10.1063/1.4824980
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this Letter, we report a quantitative analysis of the n-type doping occurring at SiO2/4H-SiC interfaces during post-deposition-annealing (PDA) in N2O or POCl3 of a 45 nm thick oxide. In particular, a nanoscale characterization using scanning capacitance microscopy on the cross section of metal-oxide-semiconductor capacitors allowed to determine the electrically active nitrogen and phosphorous concentration under the SiO2 layer after PDA in N2O and POCl3, i.e., 5 x 10(17) cm(-3) and 4.5 x 10(18) cm(-3), respectively. The technological implications have been discussed considering the possible impact of a PDA-induced "counter doping" of the p-type body region of a n-channel metal-oxide-semiconductor-field-effect-transistor on the device threshold voltage. (C) 2013 AIP Publishing LLC.
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页数：4
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