SiO2/4H-SiC interface doping during post-deposition-annealing of the oxide in N2O or POCl3

被引：63

作者：

Fiorenza, P. ^{[1
]}

Giannazzo, F. ^{[1
]}

Vivona, M. ^{[1
]}

La Magna, A. ^{[1
]}

Roccaforte, F. ^{[1
]}

机构：

[1] CNR IMM, I-95121 Catania, Italy

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 15期

关键词：

4H-SIC MOSFETS; NITRIC-OXIDE; PHOSPHORUS; MOBILITY; IMPLANTATION; PASSIVATION; TEMPERATURE; CARBIDE; DEVICES; STATES;

D O I：

10.1063/1.4824980

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this Letter, we report a quantitative analysis of the n-type doping occurring at SiO2/4H-SiC interfaces during post-deposition-annealing (PDA) in N2O or POCl3 of a 45 nm thick oxide. In particular, a nanoscale characterization using scanning capacitance microscopy on the cross section of metal-oxide-semiconductor capacitors allowed to determine the electrically active nitrogen and phosphorous concentration under the SiO2 layer after PDA in N2O and POCl3, i.e., 5 x 10(17) cm(-3) and 4.5 x 10(18) cm(-3), respectively. The technological implications have been discussed considering the possible impact of a PDA-induced "counter doping" of the p-type body region of a n-channel metal-oxide-semiconductor-field-effect-transistor on the device threshold voltage. (C) 2013 AIP Publishing LLC.

引用

收藏

页数：4

相关论文

共 29 条

[1] Band alignment and defect states at SiC/oxide interfaces [J].

Afanas'ev, VV ;

Ciobanu, F ;

Dimitrijev, S ;

Pensl, G ;

Stesmans, A .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2004, 16 (17) :S1839-S1856

[2] Relationship between 4H-SiC/SiO2 transition layer thickness and mobility [J].

Biggerstaff, T. L. ;

Reynolds, C. L., Jr. ;

Zheleva, T. ;

Lelis, A. ;

Habersat, D. ;

Haney, S. ;

Ryu, S. -H. ;

Agarwal, A. ;

Duscher, G. .

APPLIED PHYSICS LETTERS, 2009, 95 (03)

[3] Phosphorus implantation into 4H-silicon carbide [J].

Capano, MA ;

Santhakumar, R ;

Venugopal, R ;

Melloch, MR ;

Cooper, JA .

JOURNAL OF ELECTRONIC MATERIALS, 2000, 29 (02) :210-214

[4] Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide [J].

Chung, GY ;

Tin, CC ;

Williams, JR ;

McDonald, K ;

Di Ventra, M ;

Pantelides, ST ;

Feldman, LC ;

Weller, RA .

APPLIED PHYSICS LETTERS, 2000, 76 (13) :1713-1715

[5] Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide [J].

Chung, GY ;

Tin, CC ;

Williams, JR ;

McDonald, K ;

Chanana, RK ;

Weller, RA ;

Pantelides, ST ;

Feldman, LC ;

Holland, OW ;

Das, MK ;

Palmour, JW .

IEEE ELECTRON DEVICE LETTERS, 2001, 22 (04) :176-178

[6] Low density of interface states in n-type 4H-SiC MOS capacitors achieved by nitrogen implantation [J].

Ciobanu, F ;

Pensl, G ;

Afanas'ev, VV ;

Schöner, A .

SILICON CARBIDE AND RELATED MATERIALS 2004, 2005, 483 :693-696

[7] Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor field-effect transistors [J].

Frazzetto, A. ;

Giannazzo, F. ;

Fiorenza, P. ;

Raineri, V. ;

Roccaforte, F. .

APPLIED PHYSICS LETTERS, 2011, 99 (07)

[8] Acceptor, compensation, and mobility profiles in multiple Al implanted 4H-SiC [J].

Giannazzo, F. ;

Roccaforte, F. ;

Raineri, V. .

APPLIED PHYSICS LETTERS, 2007, 91 (20)

[9] Experimental aspects and modeling for quantitative measurements in scanning capacitance microscopy [J].

Giannazzo, F ;

Goghero, D ;

Raineri, V .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (05) :2391-2397

[10] Quantitative carrier profiling in ion-implanted 6H-SiC [J].

Giannazzo, F ;

Calcagno, L ;

Raineri, V ;

Ciampolini, L ;

Ciappa, M ;

Napolitani, E .

APPLIED PHYSICS LETTERS, 2001, 79 (08) :1211-1213