Temperature Effect on Dielectric Breakdown and Charges Retention of Nanocrystalline Cadmium Selenide Embedded Zr-Doped HfO2 High-k Dielectric Thin Film

被引：10
作者：
Zhang, Shumao [1 ]
Kuo, Yue [1 ]
机构：
[1] Texas A&M Univ, Artie McFerrin Dept Chem Engn, Thin Films Nano & Microelectr Res Lab, College Stn, TX 77843 USA
来源：
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 2016年 / 16卷 / 04期
关键词：
High-k dielectric; nonvolatile memories; dielectric breakdown; dielectric relaxation; reliability; SOFT BREAKDOWN; NONVOLATILE MEMORIES; MODEL;
D O I：
10.1109/TDMR.2016.2617682
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Temperature influence on the dielectric breakdown and charges retention of the nanocrystalline cadmium selenide embedded high-k dielectric thin film has been investigated. The embedding of nanocrystals in the high-k stack strongly enhanced the charge storage capability. Metal oxide semiconductor capacitors composed of this kind of dielectric structure showed the two-step breakdown phenomenon corresponding to failures of the interface and the bulk high-k layers, separately. The failure process was accelerated by the rise of temperature due to increases of defect states and defect effective conduction radii. The memory window was changed with the rise of temperature due to the competitive charge trapping and detrapping mechanisms. This paper provided important information on the practical application of this novel type of memory device.
引用
收藏
页码：561 / 569
页数：9
相关论文
共 41 条
[1]   A study of soft and hard breakdown - Part I: Analysis of statistical percolation conductance [J].
Alam, MA ;
Weir, BE ;
Silverman, PJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (02) :232-238
[2]   Time-dependent-dielectric-breakdown characteristics of Hf-doped Ta2O5/SiO2 stack [J].
Atanassova, E. ;
Novkovski, N. ;
Spassov, D. ;
Paskaleva, A. ;
Skeparovski, A. .
MICROELECTRONICS RELIABILITY, 2014, 54 (02) :381-387
[3]   Time-dependent dielectric breakdown in pure and lightly Al-doped Ta2O5 stacks [J].
Atanassova, E. ;
Stojadinovic, N. ;
Spassov, D. ;
Manic, I. ;
Paskaleva, A. .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2013, 28 (05)
[4]   Memory Functions of Nanocrystalline ITO Embedded Zirconium-Doped Hafnium Oxide High-k Capacitor with ITO Gate [J].
Birge, Adam ;
Kuo, Yue .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2012, 159 (06) :H595-H598
[5]   Noise characteristics of radiation-induced soft breakdown current in ultrathin gate oxides [J].
Cester, A ;
Bandiera, L ;
Ceschia, M ;
Ghidini, G ;
Paccagnella, A .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2001, 48 (06) :2093-2100
[6]   Temperature-dependent relaxation current on single and dual layer Pt metal nanocrystal-based Al2O3/SiO2 gate stack [J].
Chen, Y. N. ;
Goh, K. E. J. ;
Wu, X. ;
Lwin, Z. Z. ;
Singh, P. K. ;
Mahapatra, S. ;
Pey, K. L. .
JOURNAL OF APPLIED PHYSICS, 2012, 112 (10)
[7]   Temperature dependent time-to-breakdown (TBD) of TiN/HfO2 n-channel MOS devices in inversion [J].
Chowdhury, N. A. ;
Wang, X. ;
Bersuker, G. ;
Young, C. ;
Rahim, N. ;
Misra, D. .
MICROELECTRONICS RELIABILITY, 2009, 49 (05) :495-498
[8]   Soft breakdown of ultra-thin gate oxide layers [J].
Depas, M ;
Nigam, T ;
Heyns, MM .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (09) :1499-1504
[9]  
Hauser JR, 1998, AIP CONF PROC, V449, P235
[10]   The need for a full-chip and package thermal model for thermally optimized IC designs [J].
Huang, W ;
Humenay, E ;
Skadron, K ;
Stan, MR .
ISLPED '05: PROCEEDINGS OF THE 2005 INTERNATIONAL SYMPOSIUM ON LOW POWER ELECTRONICS AND DESIGN, 2005, :245-250
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