Inverse temperature dependence of reverse gate leakage current in AlGaN/GaN HEMT

被引：20

作者：

Kaushik, J. K. ^{[1
]}

Balakrishnan, V. R. ^{[1
]}

Panwar, B. S. ^{[2
]}

Muralidharan, R. ^{[1
]}

机构：

[1] Solid State Phys Lab, Delhi 110054, India

[2] Indian Inst Technol Delhi, New Delhi 110016, India

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2013年 / 28卷 / 01期

关键词：

ELECTRON-MOBILITY TRANSISTORS; TRANSCONDUCTANCE DISPERSION; HOPPING CONDUCTION; INTERFACE STATES; CURRENT COLLAPSE; SURFACE-STATES; MECHANISM; SEMICONDUCTOR; HFETS; GAN;

D O I：

10.1088/0268-1242/28/1/015026

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The experimentally observed inverse temperature dependence of the reverse gate leakage current in AlGaN/GaN HEMT is explained using a virtual gate trap-assisted tunneling model. The virtual gate is formed due to the capture of electrons by surface states in the vicinity of actual gate. The increase and decrease in the length of the virtual gate with temperature due to trap kinetics are used to explain this unusual effect. The simulation results have been validated experimentally.

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页数：6

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