Low-Power CMOS Inductorless Bandwidth-Enhanced Transimpedance Amplifier for Short-Haul Applications

被引：0

作者：

Taghavi, M. H. ^{[1
]}

Ahmadi, P. ^{[1
]}

Belostotski, L. ^{[1
]}

Haslett, J. W. ^{[1
]}

机构：

[1] Univ Calgary, Dept Elect & Comp Engn, Calgary, AB, Canada

来源：

2013 IEEE RADIO AND WIRELESS SYMPOSIUM (RWS) | 2013年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new technique using parallel current-based circuits and resistive compensation to realize an inductorless transimpedance amplifier (TIA) with enhanced bandwidth is introduced. An example TIA implemented in 0.13 mu m 1.2V standard CMOS achieves 3dB bandwidth of 11.2GHz when driven by a large 500fF photodiode capacitance. This design enhances the bandwidth by a factor of 3.86 with less than 0.1dB gain ripple, achieving the highest figure of merit among published 20Gb/s inductorless 0.13 mu m CMOS designs for short-haul applications.

引用

页码：82 / 84

页数：3

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