Low-Power CMOS Inductorless Bandwidth-Enhanced Transimpedance Amplifier for Short-Haul Applications

被引：0
|
作者：
Taghavi, M. H. [1 ]
Ahmadi, P. [1 ]
Belostotski, L. [1 ]
Haslett, J. W. [1 ]
机构：
[1] Univ Calgary, Dept Elect & Comp Engn, Calgary, AB, Canada
来源：
2013 IEEE RADIO AND WIRELESS SYMPOSIUM (RWS) | 2013年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new technique using parallel current-based circuits and resistive compensation to realize an inductorless transimpedance amplifier (TIA) with enhanced bandwidth is introduced. An example TIA implemented in 0.13 mu m 1.2V standard CMOS achieves 3dB bandwidth of 11.2GHz when driven by a large 500fF photodiode capacitance. This design enhances the bandwidth by a factor of 3.86 with less than 0.1dB gain ripple, achieving the highest figure of merit among published 20Gb/s inductorless 0.13 mu m CMOS designs for short-haul applications.
引用
收藏
页码：82 / 84
页数：3
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